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RTR040N03
Transistors
Switching (30V, 4.0A)
RTR040N03
Features 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). External dimensions (Unit : mm)
2.90.1
1.0MAX.
0.850.1 0.70.1
0.4 +0.1 -0.05
(3)
2.80.2
Application Power switching, DC / DC converter.
1.6 +0.2 -0.1
0 to 0.1
(1)
0.95 0.95
(2)
1.90.2
0.16 +0.1 -0.06
Structure Silicon N-channel MOS FET
Each lead has same dimensions
Abbreviated symbol : QV
Packaging specifications
Package Type RTR040N03 Code Basic ordering unit (pieces) Taping TL 3000
Equivalent circuit
(3)
(1) 1
2
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation Channel temperature Range of Storage temperature
1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board
Symbol VDSS VGSS ID IDP 1 IS ISP 1 PD 2 Tch Tstg
Limits 30 12 4.0 16 0.8 16 1.0 150 -55 to +150
Unit V V A A A A W C C
0.3 to 0.6
TSMT3
(2) 1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Gate (2) Source (3) Drain
Thermal resistance (Ta=25C)
Parameter Channel to ambient Symbol Rth (ch-a) Limits 125 Unit C / W
1/4
RTR040N03
Transistors
Electrical characteristics (Ta=25C)
Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf
Qg Qgs Qgd

Min. - 30 - 0.5 - - - 4.0 - - - - - - - - - -
Typ. - - - - 34 36 47 - 475 120 70 10 18 37 19 5.9 1.0 2.0
Max. 10 - 1 1.5 48 50 66 - - - - - - - - 8.3 - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=12V, VDS=0V ID= 1mA, VGS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID= 4.0A, VGS= 4.5V ID= 4.0A, VGS= 4.0V ID= 4.0A, VGS= 2.5V VDS= 10V, ID= 4.0A VDS= 10V VGS=0V f=1MHz ID= 2.0A VDD 15V VGS= 4.5V RL=7.5 RG=10 VDD 15V VGS= 4.5V ID= 4.0A RL=3.75 RG=10
Body diode characteristics (source-drain characteristics) VSD Forward voltage - - 1.2
V
IS= 0.8A, VGS=0V
2/4
RTR040N03
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VDS=10V pulsed
DRAIN CURRENT : ID (A)
1
Ta=125C 75C 25C -25C
VGS=4.5V pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
1000
1000
VGS=4.0V pulsed
Ta=125C 75C 25C -25C
Ta=125C 75C 25C -25C
0.1
100
100
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
3.0
10 0.01
0.1
1
10
10 0.01
0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VGS=2.5V pulsed
180 160 140 120 100 80 60 40 20 0 0 2 4 6 8
ID=2.0A ID=4.0A
Ta=25C pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
200
1000
VGS=25C pulsed
Ta=125C 75C 25C -25C
VGS=2.5V
100
100
VGS=4.0V VGS=4.5V
10 0.01
0.1
1
10
10
12
10 0.01
0.1
1
10
DRAIN CURRENT : ID (A)
GATE SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voletage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
100
VGS=0V pulsed
Ta=125C 75C 25C -25C
1000
Ta=25C f=1MHz VGS=0V
10000
SOURCE CURRENT : IS (A)
10
Ciss
SWITCHING TIME : t (ns)
Ta=25C VDD=15V VGS=4.5V RG=10 pulsed tf
CAPACITANCE : C (pF)
1000
1
100
Coss
100
td(off)
0.1
Crss
tr
10
td(on)
0.01 0.0
0.5
1.0
1.5
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
Fig.7 Source Current vs. Source-Drain Voltage
Fig.8 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
RTR040N03
Transistors
GATE-SOURCE VOLTAGE : VGS (V)
5 Ta=25C 4
VDD=15V ID=4.0V RG=10 pulsed
3
2
1
0
0
1
2
3
4
5
6
7
8
TOTAL GATE CHARGE : Qg (nC)
Fig.10 Dynamic Input Characteristics
Measurement circuits
Pulse Width
VGS
ID RL D.U.T.
VDS
VGS VDS
50% 10% 10%
90%
50% 10%
RG VDD
td(on) ton 90% tr td(off) toff 90% tr
Fig.11 Switching Time Test Circuit
Fig.12 Switching Time Waveforms
VG
VGS ID RL IG (Const.) D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
Charge
Fig.13 Gate Charge Test Circuit
Fig.14 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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